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Single N-Channel Enhancement Mode MOSFET
General Description Features
This N-Channel Enhancement Mode MOSFET is 7.0 A, 30 V. RDS(ON) = 0.030 @ VGS = 10 V
produced using Fairchild Semiconductor's advance
process that has been especially tailored to minimize RDS(ON) = 0.050 @ VGS = 4.5 V
on-state resistance and yet maintain superior switching
performance. Low gate charge.
This device is well suited for low voltage and battery Fast switching speed.
powered applications where low in-line power loss and
fast switching are required. High power and current handling capability.
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