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Descr: . Electronic Components Datasheets Active components Transistors CET cem3109.pdf
Group:Electronics > Components > Transistors
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CEM3109 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRELIMINARY FEATURES 30V, 10A, RDS(ON) = 14m @VGS = 10V. RDS(ON) = 20m @VGS = 4.5V. -30V, -8A, RDS(ON) = 20m @VGS = -10V. RDS(ON) = 30m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2 8 7 6 5 High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 2 3 4 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Channel 1 Channel 2 Units Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS

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