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2SA933AS TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 123 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -150 mA PC Collector Power dissipation 300 mW Dimensions in inches and (millimeters) TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -6 V Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 A Emitter cut-off current IEBO VEB= -6V, IC=0 -0.1 A DC current gain hFE VCE=-6 V, IC= -1mA 120 560 Collector-emitter saturation voltage VCEsat IC= -50mA, IB=-5mA -0.5 V VCE=-12V, IC=-2mA Transition frequency fT 140 MHz f=30MHz Collector output capacitance Cob VCB=-12V, IC=0, f=1MHz 4 5 pF CLASSIFICATION OF hFE Rank Q R S Range 120-270 180-390 270-560 2SA933AS TO-92S Transistor (PNP) Typical charact