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STB30NF10 STP30NF10 STP30NF10FP N-CHANNEL 100V - 0.038 - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFETTM II POWER MOSFET TYPE VDSS RDS(on) ID STB30NF10 100 V <0.045 35 A STP30NF10 100 V <0.045 35 A STP30NF10FP 100 V <0.045 18 A s TYPICAL RDS(on) = 0.038 3 3 1 s EXCEPTIONAL dv/dt CAPABILITY 1 2 s 100% AVALANCHE TESTED D2PAK TO-220FP TO-263 s APPLICATION ORIENTED CHARACTERIZATION (Suffix "T4") s SURFACE-MOUNTING D2PAK (TO-263) 3 POWER PACKAGE IN TUBE (NO SUFFIX) OR 1 2 IN TAPE & REEL (SUFFIX "T4") TO-220 DESCRIPTION This Power MOSFET is the latest development of INTERNAL SCHEMATIC DIAGRAM STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STB30NF10 STP30NF10FP STP30NF10 VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-gate Voltage (RGS = 20 k) 100 V VGS Gate- source Voltage