KEC kgt15n120kda free download

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SEMICONDUCTOR TECHNICAL DATA KGT15N120KDA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High system efficiency Short Circuit Withstand Times 10us Extremely enhanced avalanche capability MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES 20 V @TC=25 30 A Collector Current IC @TC=100 15 A Pulsed Collector Current ICM* 45 A Diode Continuous Forward Current @TC=100 IF 15 A Diode Maximum Forward Current IFM 45 A @TC=25 200 W Maximum Power Dissipation PD @TC=100 80 W Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 to + 150 *Repetitive rating : Pulse width limited by max. junction temperature THERMAL CHARACTERISTIC E CHARACTERISTIC SYMBOL MAX. UNIT C G Thermal Resistance, Junction to Case (IGBT) Rt h JC 0.6 /W Thermal Resistance, Junction to Case (DIODE) Rt h JC 2.8 /W Thermal Resistance, Junction to Ambient Rt h JA 40 /W 2011. 5. 25 Revision No : 0 1/8 KGT15N120KDA ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=1.0mA 1200 - - V Collector Cut-off Current ICES VGE=0V, VCE=120