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STP4NB50 STP4NB50FP N-CHANNEL 500V - 2.5 - 3.8A - TO-220/TO-220FP PowerMeshTM MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP4NB50 500 V < 2.8 3.8 A STP4NB50FP 500 V < 2.8 2.5 A s TYPICAL RDS(on) = 2.5 s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED 3 3 2 2 s VERY LOW INTRINSIC CAPACITANCES 1 1 s GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP4NB50 STP4NB50FP VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k) 500 V VGS Gate- source Voltage