Philips 2n7002pt free download

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2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 -- 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb = 25 C - - 60 V VGS gate-source voltage Tamb = 25 C - - 20 V ID drain current Tamb = 25 C; [1] - - 310 mA VGS = 10 V RDSon drain-source on-state Tj = 25 C; - 1 1.6 resistance VGS = 10 V; ID = 500 mA [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors 2N7002PT 60 V, 310 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2 S source 3 D drain G 1 2