N-Channel Enhancement Mode Field Effect Transistor
General Description Features
The AOD4184 uses advanced trench technology and VDS (V) = 40V
design to provide excellent R DS(ON) with low gate ID = 50A (VGS = 10V)
charge. With the excellent thermal resistance of the RDS(ON) < 8m (VGS = 10V)
DPAK package, this device is well suited for high RDS(ON) < 11m (VGS = 4.5V)
current load applications.
100% UIS Tested!
100% Rg Tested!
D-PAK Bottom View D