LGE 2sa1980 free download

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2SA1980(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low collector saturation voltage: VCE(sat) =-0.3V(Max.) Low output capacitance : Cob =4pF (Typ.) Complementary pair with 2SC5343 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 A Collector cut-off current ICEO VEB=-5V,IC=0 -0.1 A DC current gain hFE VCE=-6V,IC=-2mA 70 700 Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0.3 V Transition frequency fT VCE=-10V,IC=-1mA 80 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz