Philips bsp110 free download

File name bsp110.pdf

BSP110 N-channel enhancement mode field-effect transistor Rev. 03 -- 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: BSP110 in SOT223. 2. Features s TrenchMOSTM technology s Very fast switching s Logic level compatible s Surface mount package. 3. Applications s Relay driver c s High speed line driver c s Logic level translator. 4. Pinning information Table 1: Pinning - SOT223, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) 4 d 2 drain (d) 3 source (s) 4 drain (d) g 03ab45 03ab30 1 2 3 s SOT223 N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors BSP110 N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj = 25 to 150