Various ap4435gm free download

File name ap4435gm.pdf

AP4435GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V D Low On-resistance D RDS(ON) 20m D Fast Switching Characteristic ID -9A G S S SO-8 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage - 30 V VGS Gate-Source Voltage + 20 V 3 ID@TA=25 Continuous Drain Current -9 A 3 ID@TA=70 Continuous Drain Current -7.3 A 1 IDM Pulsed Drain Current -50 A PD@TA=25 Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150