Philips buk482-200a 2 free download

File name buk482-200a_2.pdf

Philips Semiconductors Product specification PowerMOS transistor BUK482-200A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 200 V mounting featuring high avalanche ID Drain current (DC) 2.0 A energy capability, stable blocking Ptot Total power dissipation 8.3 W voltage, fast switching and high RDS(ON) Drain-source on-state resistance 0.9 thermal cycling performance. Intended for use in Switched Mode Power Supplies (SMPS) and general purpose switching applications. PINNING - SOT223 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 4 d 1 gate 2 drain g 3 source 4 drain (tab) 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - 200 V VDGR Drain-gate voltage RGS = 20 k - 200 V