ST stp19nb20 free download

File name stp19nb20.pdf

STP19NB20 - STP19NB20FP STB19NB20-1 N-CHANNEL 200V - 0.15 - 19A - TO-220/TO-220FP/I2PAK PowerMESHTM MOSFET TYPE VDSS RDS(on) ID STP19NB20 200 V < 0.18 19 A STP19NB20FP 200 V < 0.18 10 A STB19NB20-1 200 V < 0.18 19 A s TYPICAL RDS(on) = 0.15 3 2 s EXTREMELY HIGH dv/dt CAPABILITY 1 s 100% AVALANCHE TESTED TO-220 TO-220FP s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED 3 12 DESCRIPTION 2 I PAK Using the latest high voltage MESH OVERLAYTM (Tabless TO-220) process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM coupled with the Company's proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP(B)19NB20(-1) STP19NB20FP VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain-gate Voltage (RGS = 20 k) 200 V VGS Gate- source Voltage