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DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. PACKAGE DIMENSIONS 15.7 MAX. FEATURES · High Voltage VCEO = -200 V · DC Current Gain hFE = 70 to 200 · TO-3P Package 1.0 3.2±0.2 4.7 MAX. 1.5 20.5MAX. 5.0 4 4.5±0.2 1.0±0.2 0.6±0.1 5.45 1 19 MIN. 3.4MAX. 2 3 ORDERING INFORMATION Type Number 2SA1988 Package MP-88 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Total Power Dissipantion JunctionTemperature VCBO VCEO VEBO IC (DC) IC (pulse) *1 P2 *2 TJ -200 -200 -5.0 -7.0 -10 100 150 -55 to +150 *2 TC = 25 °C V V V A A W °C °C 2.2±0.2 5.45 2.8±0.1 MP-88 1.Base 2.Collector 3.Emitter 4.Fin (Collector) Storage Tempreature Tstg *1 PW 300 µs, Duty Cycle 10 % ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Gain Band width Product Output Capacitance SYMBOL ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob 70 20 -0.6 -1.3 40 270 -2.0 -2.0 MIN. TYP. MAX. -50 -50 200 UNIT TEST CONDITIONS VCB = -200 V, IE = 0 VEB = -3.0 V, IC = 0 VCE = -5.0 V, IC = -1.0 A VCE = -5.0 V, IC = -3.5 A IC = -5.0 V, IE = -0.5 V IC = -5.0 V, IE = -0.5 V VCE = -5.0 V, IC = 1.0 mA VCB = -10 V, IC = 0, f = 1.0 MHz µA µA - - V V MHz pF Pulse Test PW 350 µs, Duty Cycle 2 % The information in this document is subject to change without notice. Document No. D11176EJ1V0DS00 (1st edition) Date Published May 1996 P Printed in Japan © 1996 2SA1988 CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 120 100 80 60 40 20 0 20 40 60 80 100 120 140 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE S/b 60 40 20 Di ss ipa Lim ited tio n Lim ite d 0 50 100 150 TC - Case Temperature - °C TC - Case Temperature - °C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE -12 IC - Collector Current - A -10 -8 -6 -4 20mA -2 -1000 0 -10 -20 -30 IB=120mA 100mA 80mA 60mA 40mA Pulsed FORWARD BIAS SAFE OPERATING AREA -100 IC - Collector Current - A -10 IC(Pulse) IC(DC) Di PW ss ipa tio n =1 m s 10ms 100ms 200ms Lim -1 ite d S/ bL im -0.1 -1 TC = 25 °C Single Pulse -10 -100 VCE - Collector to Emitter Voltage - V ite d VCE - Collector to Emitter Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W 10 1 Rth (J-C) 0.1 Single Pulse TC=25°C 1m 10 m 100 m 1 10 100 1 000 0.01 100 µ PW - Pulse Width - s 2 2SA1988 COLLECTOR SATURATION VOLTAGE AND BASE SATURATION VOLTAGE VS COLLECTOR CURRENT 10 VCE - Collector Saturation voltage - V VBE - Base Saturation Voltage - V DC CURRENT GAIN VS COL