Various AO4422 - N-Channel Enhancement Mode Field Effect Transistor free download

File name AO4422 - N-Channel Enhancement Mode Field Effect Transistor.pdf

Jan 2003 AO4422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4422 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 11A device is suitable for use as a load switch or in PWM RDS(ON) < 15m (VGS = 10V) applications. The source leads are separated to allow RDS(ON) < 24m (VGS = 4.5V) a Kelvin connection to the source, which may be used to bypass the source inductance. D S D S D S D G D G S SOIC-8 Absolute Maximum Ratings TA=25