Fairchild Semiconductor fdms3672 free download

File name fdms3672.pdf

FDMS3672 N-Channel UltraFET Trench MOSFET February 2007 FDMS3672 tm N-Channel UltraFET Trench MOSFET 100V, 22A, 23m Features General Description Max rDS(on) = 23m at VGS = 10V, ID = 7.4A UItraFET devices combine characteristics that enable Max rDS(on) = 29m at VGS = 6V, ID = 6.6A benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, Typ Qg = 31nC at VGS = 10V these devices are ideal for high frequency DC to DC converters. Low Miller Charge Application Optimized efficiency at high frequencies DC - DC Conversion RoHS Compliant Pin 1 S S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D D D D Power (Bottom view) MOSFET Maximum Ratings TA = 25