Fairchild Semiconductor ndp6030pl ndb6030pl free download

File name ndp6030pl_ndb6030pl.pdf

June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field -30 A, -30 V. RDS(ON) = 0.042 @ VGS= -4.5 V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.025 @ VGS= -10 V. high cell density, DMOS technology. This very high density Critical DC electrical parameters specified at elevated process is especially tailored to minimize on-state resistance. temperature. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency Rugged internal source-drain diode can eliminate the need switching circuits where fast switching, low in-line power loss, for an external Zener diode transient suppressor. and resistance to transients are needed. High density cell design for extremely low RDS(ON). 175