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Descr: . Electronic Components Datasheets Active components Transistors Philips php101nq03lt_phu101nq03lt.pdf
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PHP/PHU101NQ03LT N-channel TrenchMOS logic level FET Rev. 03 -- 17 November 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Logic level threshold s Low gate charge s Low on-state resistance 1.3 Applications s Optimized as a control FET in DC-to-DC converters 1.4 Quick reference data s VDS 30 V s ID 75 A s RDSon 5.5 m s Ptot 166 W 2. Pinning information Table 1: Pinning Pin Description Simplified outline Symbol 1 gate (G) mb mb D 2 drain (D) 3 source (S) G mb mounting base; connected to drain mbb076 S 1 2 3 SOT533 (IPAK) 1 2 3 SOT78 (3-lead TO-220AB) Philips Semiconductors PHP/PHU101NQ03LT N-channel TrenchMOS logic level FET 3. Ordering information Table 2: Ordering information Type number Package Name Description Version PHP101NQ03LT SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; SOT78 3-lead TO-220AB PHU101NQ03LT IPAK plastic single-ended package; 3 leads (in-line) SOT533 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25

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