Various AO4468 - N-Channel Enhancement Mode Field Effect Transistor free download

File name AO4468 - N-Channel Enhancement Mode Field Effect Transistor.pdf

AO4468 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4468 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This VDS (V) = 30V device is suitable for use as a load switch or in ID = 11.6A (V GS = 10V) PWM applications. The source leads are separated RDS(ON) < 14m (VGS = 10V) to allow a Kelvin connection to the source, which RDS(ON) < 22m (VGS = 4.5V) may be used to bypass the source inductance. Standard Product AO4468 is Pb-free (meets ROHS & Sony 259 specifications). AO4468L is a Green Product ordering option. AO4468 and AO4468L are electrically identical. D S D S D S D G D G SOIC-8 S Absolute Maximum Ratings TA=25