Fairchild Semiconductor nds9956a free download

File name nds9956a.pdf

February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 3.7A, 30V. RDS(ON) = 0.08 @ VGS = 10V transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density High density cell design for extremely low RDS(ON). process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high High power and current handling capability in a widely used energy pulses in the avalanche and commutation modes. surface mount package. These devices are particularly suited for low voltage Dual MOSFET in surface mount package. applications such as DC/DC conversion and DC motor control where fast switching, low in-line power loss, and resistance to transients are needed. ________________________________________________________________________________ 5 4 6 3 7 2 8 1 Absolute Maximum Ratings T A= 25