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Descr: . Electronic Components Datasheets Active components Transistors ST std6n62k3_stf6n62k3_stp6n62k3_stu6n62k3.pdf
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STD6N62K3 - STF6N62K3 STP6N62K3 - STU6N62K3 N-channel 620 V, 1.1 5.5 A, IPAK, DPAK, TO-220,TO-220FP , SuperMESH3TM Power MOSFET Features RDS(on) 3 3 Type VDSS ID Pw 2 1 max 1 DPAK STD6N62K3 620 V < 1.28 5.5 A 90 W IPAK STF6N62K3 620 V < 1.28 5.5 A(1) 25 W STP6N62K3 620 V < 1.28 5.5 A 90 W STU6N62K3 620 V < 1.28 5.5 A 90 W 1. Limited by package 3 3 2 2 100% avalanche tested 1 1 Extremely high dv/dt capability TO-220 TO-220FP Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery Figure 1. Internal schematic diagram characteristics Zener-protected Application Switching applications Description The new SuperMESH3TM series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESHTM layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly versus previous generation, special attention has been taken to ensure a very good dv/dt capability and higher margin in breakdown voltage for the most demanding application. Table 1. Device summary Order codes Marking Package Packaging STD6N62K3 6N62K3 DPAK Tape and reel STF6N62K3 6N62K3 TO-220FP Tube STP6N62K3 6N62K3 TO-220 Tube STU6N62K3 6N62K3 IPAK Tube May 2008 Rev 1 1/17 www.st.com 17 Contents STD6N62K3 - STF6N62K3 - STP6N62K3 - STU6N62K3 Contents 1 E

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