Fairchild Semiconductor nds9400a free download

File name nds9400a.pdf

February 1996 NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -3.4A, -30V. RDS(ON) = 0.13 @ VGS = -10V. transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON). especially tailored to minimize on-state resistance, provide High power and current handling capability in a widely used superior switching performance, and withstand high energy surface mount package. pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such Rugged and reliable. as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. ________________________________________________________________________________ 5 4 6 3 7 2 8 1 Absolute Maximum Ratings T A= 25