Fairchild Semiconductor nds9952a free download

File name nds9952a.pdf

February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power N-Channel 3.7A, 30V, RDS(ON)=0.08 @ VGS=10V. field effect transistors are produced using Fairchild's P-Channel -2.9A, -30V, RDS(ON)=0.13 @ VGS=-10V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to High density cell design or extremely low RDS(ON). minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the High power and current handling capability in a widely used avalanche and commutation modes. These devices are surface mount package. particularly suited for low voltage applications such as Dual (N & P-Channel) MOSFET in surface mount package. notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. ________________________________________________________________________________ 5 4 6 3 7 2 8 1 Absolute Maximum Ratings T A= 25