Fairchild Semiconductor nds8936 free download

File name nds8936.pdf

June 1997 NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 5.3A, 30V. RDS(ON) = 0.035 @ VGS = 10V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = 4.5V. density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide High density cell design for extremely low RDS(ON). superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer High power and current handling capability in a widely used power management and other battery powered circuits where surface mount package. fast switching, low in-line power loss, and resistance to Dual MOSFET in surface mount package. transients are needed. ________________________________________________________________________________ 5 4 6 3 7 2 8 1 Absolute Maximum Ratings T A= 25