Fairchild Semiconductor ndt456p free download

File name ndt456p.pdf

December 1998 NDT456P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field -7.5 A, -30 V. RDS(ON) = 0.030 @ VGS = -10 V effect transistors are produced using Fairchild's RDS(ON) = 0.045 @ VGS = -4.5 V. proprietary, high cell density, DMOS technology. This very high density process is especially tailored to High density cell design for extremely low RDS(ON). minimize on-state resistance and provide superior switching performance. These devices are particularly High power and current handling capability in a widely suited for low voltage applications such as notebook used surface mount package. computer power management, battery powered circuits, and DC motor control. ______________________________________________________________________________ D D G D S G S Absolute Maximum Ratings TA = 25