Fairchild Semiconductor nds355n free download

File name nds355n.pdf

March 1996 NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 1.6A, 30V. RDS(ON) = 0.125 @ VGS = 4.5V. effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density Proprietary package design using copper lead frame for process is especially tailored to minimize on-state resistance. superior thermal and electrical capabilities. These devices are particularly suited for low voltage High density cell design for extremely low RDS(ON). applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, Exceptional on-resistance and maximum DC current and low in-line power loss are needed in a very small outline capability. surface mount package. Compact industry standard SOT-23 surface mount package. _______________________________________________________________________________ D G S Absolute Maximum Ratings T A = 25