Fairchild Semiconductor fds8928a free download

File name fds8928a.pdf

July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power N-Channel 5.5 A,30 V, RDS(ON)=0.030 @ VGS=4.5 V field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very RDS(ON)=0.038 @ VGS=2.5 V. high density process is especially tailored to minimize P-Channel -4 A,-20 V, RDS(ON)=0.055 @ VGS=-4.5 V on-state resistance and provide superior switching RDS(ON)=0.072 @ VGS=-2.5 V. performance. These devices are particularly suited for low voltage applications such as notebook computer power High density cell design for extremely low RDS(ON). management and other battery powered circuits where fast High power and current handling capability in a widely used switching, low in-line power loss, and resistance to surface mount package. transients are needed. Dual (N & P-Channel) MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 5 4 D2 D1 S D1 FD 8A 6 3 2 89 7 2 G2 S2 8 1 G1 SO-8 pin 1 S1 Absolute Maximum Ratings T A = 25