Fairchild Semiconductor nds9959 free download

File name nds9959.pdf

February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 2.0A, 50V. RDS(ON) = 0.3 @ VGS = 10V transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON). especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy High power and current handling capability in a widely used pulses in the avalanche and commutation modes. These surface mount package. devices are particularly suited for low voltage applications such Dual MOSFET in surface mount package. as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. _________________________________________________________________________________ 5 4 6 3 7 2 8 1 Absolute Maximum Ratings T A = 25