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STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 6.5 A TO-220, TO-220FP, DPAK , MDmeshTM II Power MOSFET Features VDSS RDS(on) Order codes ID (@Tjmax) max. 3 3 2 2 STD9NM60N 1 1 TO-220FP TO-220 STF9NM60N 650 V < 0.745 6.5 A STP9NM60N 100% avalanche tested 3 Low input capacitance and gate charge 1 Low gate input resistance DPAK Application Switching applications Figure 1. Internal schematic diagram Description This series of devices is realized with the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Packages Packaging STD9NM60N DPAK Tape and reel STF9NM60N 9NM60N TO-220FP Tube STP9NM60N TO-220 October 2010 Doc ID 18063 Rev 1 1/16 www.st.com 16 Contents STD9NM60N, STF9NM60N, STP9NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ... 6