Fairchild Semiconductor nds8435a free download

File name nds8435a.pdf

March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect -7.9 A, -30 V. RDS(ON) = 0.023 @ VGS = -10 V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.035 @ VGS = -4.5V. density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON). especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly High power and current handling capability in a widely used suited for low voltage applications such as notebook computer surface mount package. power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. ___________________________________________________________________________________________ 5 4 6 3 7 2 8 1 Absolute Maximum Ratings T A = 25