Fairchild Semiconductor fdc6303n free download

File name fdc6303n.pdf

August 1997 FDC6303N Digital FET, Dual N-Channel General Description Features These dual N-Channel logic level enhancement mode field 25 V, 0.68 A continuous, 2 A Peak. effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.6 @ VGS = 2.7 V high cell density, DMOS technology. This very high density RDS(ON) = 0.45 @ VGS= 4.5 V. process is especially tailored to minimize on-state resistance. This device has been designed especially for Very low level gate drive requirements allowing direct low voltage applications as a replacement for digital operation in 3V circuits. VGS(th) < 1.5 V. transistors in load switching applications. Since bias Gate-Source Zener for ESD ruggedness. resistors are not required this one N-Channel FET can >6kV Human Body Model replace several digital transistors with different bias resistors like the IMHxA series. Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 Mark: .303 4 3 5 2 6 1 Absolute Maximum Ratings T A = 25