Various AO4466 - N-Channel Enhancement Mode Field Effect Transistor free download

File name AO4466 - N-Channel Enhancement Mode Field Effect Transistor.pdf

AO4466 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4466 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON) and low gate charge. This ID = 9.4A (V GS = 10V) device is suitable for use as a load switch or in PWM RDS(ON) < 23m (VGS = 10V) applications. The source leads are separated to allow RDS(ON) < 35m (VGS = 4.5V) a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4466 is Pb-free (meets ROHS & Sony 259 specifications). AO4466L is a Green Product ordering option. AO4466 and AO4466L are electrically identical. D S D S D S D G D G SOIC-8 S Absolute Maximum Ratings TA=25