Fairchild Semiconductor fdn361bn free download

File name fdn361bn.pdf

FDN361BN 30V N-Channel, Logic Level, PowerTrench MOSFET Fe bruary 2009 FDN361BN 30V N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced x 1.4 A, 30 V. RDS(ON) = 110 m: @ VGS = 10 V using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored RDS(ON) = 160 m: @ VGS = 4.5 V to minimize the on-state resistance and yet maintain superior switching performance. x Low gate charge These devices are particularly suited for low voltage applications in notebook computers, portable phones, x Industry standard outline SOT-23 surface mount PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are package using proprietary SuperSOTTM-3 design for needed in a very small outline surface mount package. superior thermal and electrical capabilities x High performance trench technology for extremely low RDS(ON) D D S G S SuperSOT -3 TM G Absolute Maximum Ratings o TA=25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage r 20 V ID Drain Current