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STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 , 7 A, FDmeshTM II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID (@Tjmax) max 2 3 3 1 STD8NM60ND 650 V < 0.70 7A 1 2 IPAK STF8NM60ND 650 V < 0.70 7A TO-220 STP8NM60ND 650 V < 0.70 7 A(1) STU8NM60ND 650 V < 0.70 7A 1. Limited only by maximum temperature allowed 3 3 1 2 The worldwide best RDS(on)* area amongst the 1 fast recovery diode devices DPAK TO-220FP 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Figure 1. Internal schematic diagram Extremely high dv/dt and avalanche capabilities Application Switching applications Description The FDmeshTM II series belongs to the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced on- resistance and fast switching with an intrinsic fast- recovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STD8NM60ND 8NM60ND DPAK Tape and reel STF8NM60ND 8NM60ND TO-220FP Tube STP8NM60ND 8NM60ND TO-220 Tube STU8NM60ND 8NM60ND IPAK Tube February 2009