Fairchild Semiconductor nds8934 free download

File name nds8934.pdf

March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -3.8A, -20V. RDS(ON) = 0.07 @ VGS = -4.5V transistors are produced using Fairchild's proprietary, RDS(ON) = 0.1 @ VGS = -2.7V. high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state High density cell design for extremely low RDS(ON). resistance, provide superior switching performance, and High power and current handling capability in a widely used withstand high energy pulses in the avalanche and surface mount package. commutation modes. These devices are particularly suited for low voltage applications such as notebook Dual MOSFET in surface mount package. computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. _________________________________________________________________________________ 5 4 6 3 7 2 8 1 Absolute Maximum Ratings T A = 25