File name 2n6758_irf230.pdf
PD - 90334F
REPETITIVE A ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS JANTXV2N6758
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]
Part Number BVDSS RDS(on) ID
IRF230 200V 0.40 9.0A
The HEXFET technology is the key to International
Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
"State of the Art" design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab- n Repetitive Avalanche Ratings
lished advantages of MOSFETs such as voltage control, n Dynamic dv/dt Rating
very fast switching, ease of paralleling and temperature n Hermetically Sealed
stability of the electrical parameters.
n Simple Drive Requirements
They are well suited for applications such as switching n Ease of Paralleling
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25