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Now downloading free:International Rectifier 2n6758 irf230

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Descr: . Electronic Components Datasheets Active components Transistors International Rectifier 2n6758_irf230.pdf
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PD - 90334F IRF230 REPETITIVE A ALANCHE AND dv/dt RATED V JANTX2N6758 HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF230 200V 0.40 9.0A TO-3 The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resis- tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability. Features: The HEXFET transistors also feature all of the well estab- n Repetitive Avalanche Ratings lished advantages of MOSFETs such as voltage control, n Dynamic dv/dt Rating very fast switching, ease of paralleling and temperature n Hermetically Sealed stability of the electrical parameters. n Simple Drive Requirements They are well suited for applications such as switching n Ease of Paralleling power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25

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