Various SI4800 - N-channel enhancement mode field-effect transistor free download

File name SI4800 - N-channel enhancement mode field-effect transistor.pdf

Si4800 N-channel enhancement mode field-effect transistor M3D315 Rev. 01 -- 13 July 2001 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: Si4800 in SOT96-1 (SO8). 2. Features s Low on-state resistance s Fast switching s TrenchMOSTM technology. 3. Applications s DC to DC convertors s DC motor control c s Lithium-ion battery applications c s Notebook PC s Portable equipment applications. 4. Pinning information Table 1: Pinning - SOT96-1, simplified outline and symbol Pin Description Simplified outline Symbol 1,2,3 source (s) 8 5 d 4 gate (g) 5,6,7,8 drain (d) g 1 4 Top view MBK187 MBB076 s SOT96-1 (SO8) 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors Si4800 N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj = 25 to 150