Fairchild Semiconductor ndc7002n free download

File name ndc7002n.pdf

March 1996 NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field 0.51A, 50V, RDS(ON) = 2 @ VGS=10V effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This High density cell design for low RDS(ON). very high density process has been designed to minimize Proprietary SuperSOTTM-6 package design using copper on-state resistance, provide rugged and reliable lead frame for superior thermal and electrical capabilities. performance and fast switching. These devices is particularly suited for low voltage applications requiring a High saturation current. low current high side switch. ____________________________________________________________________________________________ 4 3 5 2 6 1 SOT-6 (SuperSOTTM-6) Absolute Maximum Ratings T A = 25