Fairchild Semiconductor fdc653n free download

File name fdc653n.pdf

November 1997 FDC653N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect 5 A, 30 V. RDS(ON) = 0.035 @ VGS = 10 V transistors is produced using Fairchild's proprietary, high cell RDS(ON) = 0.055 @ VGS = 4.5 V. density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are Proprietary SuperSOTTM-6 package design using copper particularly suited for low voltage applications in notebook lead frame for superior thermal and electrical capabilities. computers, portable phones, PCMICA cards, and other High density cell design for extremely low RDS(ON). battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount Exceptional on-resistance and maximum DC current package. capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D 1 6 D 3 .65 2 5 G D pin 1 3 4 SuperSOT TM -6 D Absolute Maximum Ratings T A = 25