Fairchild Semiconductor fdv303n free download

File name fdv303n.pdf

August 1997 FDV303N Digital FET, N-Channel General Description Features These N-Channel enhancement mode field effect transistors are 25 V, 0.68 A continuous, 2 A Peak. produced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 0.45 @ VGS = 4.5 V technology. This very high density process is tailored to minimize RDS(ON) = 0.6 @ VGS= 2.7 V. on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either Very low level gate drive requirements allowing direct one lithium or three cadmium or NMH cells. It can be used as an operation in 3V circuits. VGS(th) < 1.5V. inverter or for high-efficiency miniature discrete DC/DC Gate-Source Zener for ESD ruggedness. conversion in compact portable electronic devices like cellular >6kV Human Body Model phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. Compact industry standard SOT-23 surface mount package. Alternative to TN0200T and TN0201T. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 Mark:303 D G S Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter FDV303N Units VDSS Drain-Source Voltage, Power Supply Voltage 25 V VGSS Gate-Source Voltage, VIN 8 V ID Drain/Output Current - Continuous 0.68 A - Pulsed 2 PD Maximum Power Dissipation 0.35 W TJ,TSTG Operating and Storage Temperature Range -55 to 15