Fairchild Semiconductor fdmc2674 free download

File name fdmc2674.pdf

FDMC2674 N-Channel UltraFET Trench MOSFET January 2007 FDMC2674 tm N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366m Features General Description Max rDS(on) = 366m at VGS = 10V, ID = 1.0A UltraFET device combines characteristics that enable Typ Qg = 12.7nC at VGS = 10V benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller charge these devices are ideal for high frequency DC to DC converters. Low Qrr Body Diode Application Optimized efficiency at high frequencies UIS Capability ( Single Pulse and Repetitive Pulse) DC/DC converters and Off-Line UPS RoHS Compliant Distributed Power Architectures Bottom Top 8 D 7 D D 5 4 G 6 D 5 D D 6 3 S D 7 2 S 1 G 2 D 3 S 8 1 S 4 S S Power 33 MOSFET Maximum Ratings TA = 25