Fairchild Semiconductor ndt014 free download

File name ndt014.pdf

September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect 2.7A, 60V. RDS(ON) = 0.2 @ VGS = 10V. transistors are produced using Fairchild's proprietary, high cell High density cell design for extremely low RDS(ON). density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide High power and current handling capability in a widely used superior switching performance. These devices are particularly surface mount package. suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. _________________________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings T A = 25