Various AO4407A - P-Channel Enhancement Mode Field Effect Transistor free download

File name AO4407A - P-Channel Enhancement Mode Field Effect Transistor.pdf

AO4407A P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4407A uses advanced trench technology to VDS = -30V provide excellent RDS(ON), and ultra-low low gate charge ID = -12A (VGS = -10V) with a 25V gate rating. This device is suitable for use as RDS(ON) < 11m (VGS = -20V) a load switch or in PWM applications. Standard Product RDS(ON) < 13m (VGS = -10V) AO4407A is Pb-free (meets ROHS & Sony 259 RDS(ON) < 38m (VGS = -10V) specifications). UIS TESTED! RG, CISS, COSS, CRSS TESTED! D SOIC-8 Top View S D S D S D G G D S Absolute Maximum Ratings TA=25