Fairchild Semiconductor irfm120a free download

File name irfm120a.pdf

Advanced Power MOSFET IRFM120A FEATURES IEEE802.3af Compatible BVDSS = 100 V ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology RDS(on) = 0.2 ! ! Lower Input Capacitance ID = 2.3 A ! Improved Gate Charge ! Extended Safe Operating Area SOT-223 ! Lower Leakage Current : 10 #A (Max.) @ VDS = 100V ! Lower RDS(ON) : 0.155 ! (Typ.) 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 100 V Continuous Drain Current (TA=25%) 2.3 ID A Continuous Drain Current (TA=70%) 1.84 IDM Drain Current-Pulsed & 18 A VGS Gate-to-Source Voltage "20 V EAS Single Pulsed Avalanche Energy ' 123 mJ IAR Avalanche Current & 2.3 A EAR Repetitive Avalanche Energy & 0.24 mJ dv/dt Peak Diode Recovery dv/dt ( 6.5 V/ns PD Total Power Dissipation (TA=25%) * 2.4 W Linear Derating Factor * 0.019 W/% Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range % Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8" from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R$JA Junction-to-Ambient * -- 52 %/W * When mounted on the minimum pad size recommended (PCB Mount).