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| File name: | stp80nf55l-08_stb80nf55l-08_stb80nf55l-08-1.pdf [preview p80nf55l-08 b80nf55l-08 b80nf55l-08-1] |
| Size: | 195 kB |
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| Mfg: | ST |
| Model: | p80nf55l-08 b80nf55l-08 b80nf55l-08-1 🔎 |
| Original: | p80nf55l-08 b80nf55l-08 b80nf55l-08-1 🔎 |
| Descr: | . Electronic Components Datasheets Active components Transistors ST stp80nf55l-08_stb80nf55l-08_stb80nf55l-08-1.pdf |
| Group: | Electronics > Components > Transistors |
| Uploaded: | 11-12-2021 |
| User: | Anonymous |
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| Decompress result: | OK | |
| Extracted files: | 1 | |
File name stp80nf55l-08_stb80nf55l-08_stb80nf55l-08-1.pdf STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065 - 80A - TO-220/D2PAK/I2PAK STripFETTM II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP80NF55L-08 55 V 0.008 80 A STB80NF55L-08 55 V 0.008 80 A STB80NF55L-08-1 55 V 0.008 80 A 3 3 1 s TYPICAL RDS(on) = 0.0065 2 1 s LOW THRESHOLD DRIVE TO-220 D2PAK s LOGIC LEVEL DEVICE 3 12 I2PAK DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature INTERNAL SCHEMATIC DIAGRAM SizeTM" strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteris- tics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 k) 55 V VGS Gate- source Voltage | ||

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