Fairchild Semiconductor ndt452ap free download

File name ndt452ap.pdf

June 1996 NDT452AP P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field -5A, -30V. RDS(ON) = 0.065 @ VGS = -10V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.1 @ VGS = -4.5V. high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance High density cell design for extremely low RDS(ON). and provide superior switching performance. These devices are particularly suited for low voltage applications such as High power and current handling capability in a widely used notebook computer power management and DC motor surface mount package. control. ________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings T A = 25