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Ordering number : ENN6478 2SD2627 NPN Triple Diffused Planar Silicon Transistor 2SD2627 Color TV Horizontal Deflection Output Applications Features · · · · · Package Dimensions unit : mm 2079C [2SD2627] 10.0 3.5 7.2 High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5 2.8 3.2 16.1 16.0 0.9 1.2 14.0 3.6 0.75 0.7 0.6 1 2 3 2.4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C 2.55 Conditions 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220FI-LS Ratings 1500 800 6 6 15 2.0 30 150 -55 to +150 Unit V V V A A W W °C °C 2.55 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Symbol ICBO ICES VCEO(sus) IEBO Conditions VCE=800V, IE=0 VCE=1500V, RBE=0 IC=100mA, IB=0 VEB=4V, IC=0 Ratings min typ max 10 1.0 800 40 130 Unit µA mA V mA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 91400 TS IM TA-2853 No.6478-1/4 2SD2627 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Diode Forward Voltage Fall Time Symbol VCE(sat) VBE(sat) hFE1 hFE2 VF tf Conditions IC=3.15A, IB=0.63A IC=3.15A, IB=0.63A VCE=5V, IC=0.5A VCE=5V, IC=3.5A IEC=6A IC=2A, IB1=0.4A, IB2=--0.8A 10 5 8 2 0.3 V µs Ratings min typ max 3 1.5 Unit V V Switching Time Test Circuit IB1 IB2 INPUT PW=20µs D.C.1% 50 RB VR + 100µF VBE= --2V + 470µF VCC=200V RL=100 OUTPUT 6 IC -- VCE 1.0A 0.8A 0.6A 0.4A 7 IC -- VBE VCE=5V 5 6 Collector Current, IC -- A 1.4A 1.2A Collector Current, IC -- A 2.0A 4 1.8A 1.6A 5 4 3 0.2A 2 3 20° 0 0.2 0.4 C 2 1 0 1 0 0 1 2 3 4 5 6 7 8 IB=0 9 10 Ta= 1 0.6 0.05A 25°C 40°C 0.8 1.0 1.2 1.4 IT01811 Collector-to-Emitter Voltage, VCE -- V 5 3 2 IT01810 5 hFE --