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Now downloading free:Sanyo STK401-070

Sanyo STK401-070 free download

Audio equipment,digital audio, home audio, professional audio systems service manuals and repair information

File information:
File name:STK401-070.PDF
Size:454 kB
Extension:pdf
Mfg:Sanyo
Model:STK401-070 🔎 STK401070
Original:
Descr:Stereo 40 WRMS Module Power Amplifier
Group:Electronics > Consumer electronics > Audio
Uploaded:19-06-2011
User:linear2001
Multipart:No multipart

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Extracted files:1
File name STK401-070.PDF

Ordering number: EN 4599A Thick Film Hybrid IC STK401-070 AF Power Amplifier (Split Power Supply) (40W+40W min, THD = 0.4%) Overview Package Dimensions The STK401-070 is a thick-film audio power amplifier IC unit: mm belonging to a series in which all devices are pin compati- ble. This allows a single PCB design to be used to con- 4134 struct amplifiers of various output capacity simply by [STK401-070] changing hybrid ICs. Also, this series is part of a new, larger series that comprises mutually similar devices with the same pin compatibility. This makes possible the devel- opment of a 2-channel amplifier from a 3-channel ampli- fier using the same PCB. In addition, this new series features 6/3 drive in order to support the low impedance of modern speakers. Features · Pin compatible STK400-000 series (3-channel/single package) STK401-000 series (2-channel/single package) · Output load impedance RL = 6/3 supported · New pin configuration Pin configuration has been grouped into individual blocks of inputs, outputs and supply lines, minimizing the adverse effects of pattern layout on operating char- acteristics. · Few external components In comparison with existing series, external bootstrap resistors and capacitors can be eliminated. SANYO Electric Co., Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 60697HA(ID) / 30795TH(ID) No. 4599--1/9 STK401-070 Specifications Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Ratings Unit Maximum supply voltage VCC max ±44 V Thermal resistance j-c Per power transistor 1.7 °C/W Junction temperature Tj 150 °C Operating substrate temperature Tc 125 °C Storage temperature Tstg

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