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File information: |
File name: | AO4601.pdf [preview AO4601] |
Size: | 686 kB |
Extension: | pdf |
MD5: | ed5c412d2d39171e6db5e283ff86c8e6 |
Mfg: | Dell |
Model: | AO4601 🔎 |
Original: | AO4601 🔎 |
Descr: | Dell AO4601.pdf |
Group: | > > |
Uploaded: | 17-11-2019 |
User: | Anonymous |
Multipart: | No multipart |
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Extracted files: | 1 |
File name | | Text |
AO4601.pdf | | AO4601
Complementary Enhancement Mode Field Effect Transistor
General Description Features
n-channel p-channel
The AO4601 uses advanced trench technology VDS (V) = 30V -30V
MOSFETs to provide excellent RDS(ON) and low ID = 4.7A (VGS=10V) -8A (VGS = -20V)
gate charge. The complementary MOSFETs may RDS(ON) RDS(ON)
be used to form a level shifted high side switch, < 55m (VGS=10V) < 18m (VGS = -20V)
and for a host of other applications. Standard < 70m (VGS=4.5V) < 19m (VGS = -10V)
Product AO4601 is Pb-free (meets ROHS & Sony
< 110m (VGS = 2.5V)
259 specifications). AO4601L is a Green Product
ordering option. AO4601 and AO4601L are
D2 D1
S2 1 8 |
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