| File information: | |
| File name: | AO4601.pdf [preview AO4601] |
| Size: | 686 kB |
| Extension: | |
| Mfg: | Dell |
| Model: | AO4601 🔎 |
| Original: | AO4601 🔎 |
| Descr: | Dell AO4601.pdf |
| Group: | Electronics > Other |
| Uploaded: | 17-11-2019 |
| User: | Anonymous |
| Multipart: | No multipart |
| Information about the files in archive: | ||
| Decompress result: | OK | |
| Extracted files: | 1 | |
File name AO4601.pdf AO4601 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel The AO4601 uses advanced trench technology VDS (V) = 30V -30V MOSFETs to provide excellent RDS(ON) and low ID = 4.7A (VGS=10V) -8A (VGS = -20V) gate charge. The complementary MOSFETs may RDS(ON) RDS(ON) be used to form a level shifted high side switch, < 55m (VGS=10V) < 18m (VGS = -20V) and for a host of other applications. Standard < 70m (VGS=4.5V) < 19m (VGS = -10V) Product AO4601 is Pb-free (meets ROHS & Sony < 110m (VGS = 2.5V) 259 specifications). AO4601L is a Green Product ordering option. AO4601 and AO4601L are D2 D1 S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G2 G1 S2 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings TA=25 | ||

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