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| File name: | HP-Bench-Briefs-1991-01-03.pdf [preview HP-Bench-Briefs-1991-01-03] |
| Size: | 12519 kB |
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| MD5: | 0c637988ac36104a1bd028036976d04d |
| Mfg: | HP |
| Model: | HP-Bench-Briefs-1991-01-03 🔎 |
| Original: | HP-Bench-Briefs-1991-01-03 🔎 |
| Descr: | HP Publikacje HP-Bench-Briefs-1991-01-03.pdf |
| Group: | Electronics > Other > |
| Uploaded: | 17-11-2019 |
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| HP-Bench-Briefs-1991-01-03.pdf | I r SERVICE INFORMATION FROM HEWLETT-PACKARD 1st Quarter 1991 Field-Effect Transistors Part I1 CMOS Jim BechtoldlEditor means that the channel must be im- - proved for current to flow (i.e., zero Introduction bias will cause minimum current flow). Enhancement-type MOSFETs In the last issue of Bench Briefs, we are diagrammed with a broken line discussed the characteristics of two representing the channel. Depletion- ; fundamental types of field-effect type MOSFETs are "normally-on" de- transistors, the JFET a | |
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